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TSM110NB04DCR
Taiwan Semiconductor SMD MOSFET series TSM and TQM
- SMD power MOSFETs
- in a PDFN56 housing
- TSC
TSM110NB04DCR
Specifications
| manufacturer | Taiwan Semiconductor |
| Manufacturer's name | TSM110NB04DCR RLG |
| Case | PDFN56 |
| Power dissipation [W] | 48 |
| Max. drain-source voltage [V] | 40 |
| Max. drain-source on-resistance [Ω] | 0,011 |
| Max. continuous drain current TC = 25°C [A] | 48 |
| Turn-on delay time [ns] | 7 |
| Min. gate threshold voltage [V] | 2 |
| Turn-off delay time [ns] | 15 |