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manufacturer | Taiwan Semiconductor |
Manufacturer's name | TSM150NB04CR RLG |
Case | PDFN56 |
Power dissipation [W] | 56 |
Max. drain-source voltage [V] | 40 |
Max. drain-source on-resistance [Ω] | 0,015 |
Max. continuous drain current TC = 25°C [A] | 41 |
Turn-on delay time [ns] | 3 |
Min. gate threshold voltage [V] | 2 |
Turn-off delay time [ns] | 8 |