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TSM 110 NB 04 LCR
Taiwan Semiconductor SMD MOSFET series TSM and TQM
- SMD power MOSFETs
- in a PDFN56 housing
- TSC
TSM 110 NB 04 LCR
Specifications
| manufacturer | Taiwan Semiconductor |
| Manufacturer's name | TSM110NB04LCR RLG |
| Case | PDFN56 |
| Power dissipation [W] | 68 |
| Max. drain-source voltage [V] | 60 |
| Max. drain-source on-resistance [Ω] | 0,012 |
| Max. continuous drain current TC = 25°C [A] | 54 |
| Turn-on delay time [ns] | 6,5 |
| Min. gate threshold voltage [V] | 1,2 |
| Turn-off delay time [ns] | 26 |