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Taiwan Semiconductor MOSFET series TSM
- TSC power MOSFETs
- in a TO251 housing
- N-Channel
TSM 900 N 10 CH
Specifications
| manufacturer | Taiwan Semiconductor |
| Manufacturer's name | TSM900N10CH X0G |
| Case | TO251S |
| Max. continuous drain current | 15 |
| Max. drain-source voltage [V] | 100 |
| Max. drain-source on-resistance [Ω] | 0,09 |
| Turn-on delay time [ns] | 2,4 |
| Min. gate threshold voltage [V] | 1,2 |
| Turn-off delay time [ns] | 18,9 |