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manufacturer | Taiwan Semiconductor |
Manufacturer's name | TSM180P03CS RLG |
Case | SO8 |
Design | taped |
Max. drain-source voltage [V] | 30 |
Max. drain-source on-resistance [Ω] | 0,018 |
Turn-on delay time [ns] | 9 |
Max. continuous drain current TC = 25°C [A] | 10 |
Min. gate threshold voltage [V] | 1,2 |
Turn-off delay time [ns] | 59,8 |