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manufacturer | Taiwan Semiconductor |
Manufacturer's name | TSM650P02CX RFG |
Case | SOT23 |
Design | taped |
Max. drain-source voltage [V] | 20 |
Max. drain-source on-resistance [Ω] | 0,065 |
Turn-on delay time [ns] | 5 |
Max. continuous drain current TC = 25°C [A] | 4,1 |
Min. gate threshold voltage [V] | 0,4 |
Turn-off delay time [ns] | 40,7 |