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TSG 10 N 120 CN
Taiwan Semiconductor IGBT series TSG
- insulated-gate bipolar transistors (IGBTs)
- with fast-recovery epitaxial diodes (FREDs)
- in a TOP3 resp. TO264 housing
TSG 10 N 120 CN
Discontinued items. Only remainder of stock available.
Specifications
| manufacturer | Taiwan Semiconductor |
| Manufacturer's name | TSG10N120CN C0 |
| Case | TOP3 |
| Power dissipation [W] | 125 |
| Turn-on delay time [ns] | 30 |
| Max. collector-emitter breakdown voltage [V] | 1200 |
| Min. gate threshold voltage [V] | 3 |
| Max. collector current, pulsed [A] | 42 |
| Turn-off delay time [ns] | 130 |
| Max. continuous collector current at TC = 25°C | 21 |