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IDW 30 G 65C5
SIC Schottky diodes
• revolutionary semiconductor material SiC
• no reverse recovery/no forward recovery
• temperature independent switching behavior
• extremly fast switching
• optimized for high temperature operation
• operating temperature range: -55...+175°C
• by Infineon
IDW 30 G 65C5
Specifications
| manufacturer | Infineon Technologies |
| Manufacturer's name | IDW30G65C5XKSA1 |
| Case | TO247 |
| Reverse current [mA] | 0,22 |
| (Max.) peak recurrent reverse voltage [V] | 650 |
| Forward voltage [V] | 1,7 |
| (Max.) average forward (rectified) current [A] | 30 |