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STGW 40 M 120 DF3
STMicroelectronics IGBT series STGW
- insulated-gate bipolar transistors (IGBTs)
- in a TO247 housing
- PowerMESH™
STGW 40 M 120 DF3
Specifications
| manufacturer | STMicroelectronics |
| Manufacturer's name | STGW40M120DF3 |
| Case | TO247 |
| Power dissipation [W] | 468 |
| Turn-on delay time [ns] | 35 |
| Max. collector-emitter breakdown voltage [V] | 1200 |
| Min. gate threshold voltage [V] | 5 |
| Max. collector current, pulsed [A] | 160 |
| Turn-off delay time [ns] | 140 |
| Max. continuous collector current at TC = 25°C | 80 |