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STGD 5 NB 120 SZT4
STMicroelectronics SMD IGBT series STGD
- insulated-gate bipolar transistors (IGBTs)
- SMD type
- in a TO252 housing
- taped
STGD 5 NB 120 SZT4
Specifications
| manufacturer | STMicroelectronics |
| Manufacturer's name | STGD5NB120SZT4 |
| Case | TO252 |
| Design | taped |
| Power dissipation [W] | 75 |
| Turn-on delay time [ns] | 690 |
| Min. gate threshold voltage [V] | 2 |
| Max. collector-emitter breakdown voltage [V] | 1200 |
| Turn-off delay time [ns] | 12100 |
| Max. collector current, pulsed [A] | 10 |
| Max. continuous collector current at TC = 25°C | 10 |