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STGD 3 NB 60 SDT4
STMicroelectronics SMD IGBT series STGD
- insulated-gate bipolar transistors (IGBTs)
- SMD type
- in a TO252 housing
- taped
STGD 3 NB 60 SDT4
Specifications
| manufacturer | STMicroelectronics |
| Manufacturer's name | STGD3NB60SDT4 |
| Case | TO252 |
| Design | taped |
| Power dissipation [W] | 48 |
| Turn-on delay time [ns] | 125000 |
| Min. gate threshold voltage [V] | 2,5 |
| Max. collector-emitter breakdown voltage [V] | 600 |
| Turn-off delay time [ns] | 3400 |
| Max. collector current, pulsed [A] | 25 |
| Max. continuous collector current at TC = 25°C | 6 |