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MID 150-12 A4
Littelfuse IGBT module series MDI and MID
- IGBT diode modules
- in a Y3-DCB resp. Y4-M5 housing
- insulated-gate bipolar transistors (IGBTs)
MID 150-12 A4
Specifications
| manufacturer | Littelfuse |
| Manufacturer's name | MID150-12A4 |
| Case | Y3-DCB |
| Peak forward surge current [A] | - |
| (Max.) peak recurrent reverse voltage [V] | - |
| (Max.) average forward (rectified) current [A] | - |
| Power dissipation [mW] | 760 |
| Turn-on delay time [ns] | 100 |
| Max. collector-emitter breakdown voltage [V] | 1200 |
| Min. gate threshold voltage [V] | 4,5 |
| Max. collector current, pulsed [A] | 240 |
| Turn-off delay time [ns] | 500 |
| Max. continuous collector current at TC = 25°C | 180 |