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IRF 630 N
Infineon MOSFET series IRF and IRL
- power MOSFETs
- in a TO220AB housing
- with a low on-resistance
IRF 630 N
Specifications
| manufacturer | Infineon Technologies |
| Manufacturer's name | IRF630NPBF |
| Case | TO220AB |
| Max. drain-source voltage [V] | 200 |
| Max. drain-source on-resistance [Ω] | 0,3 |
| Turn-on delay time [ns] | 7,9 |
| Max. continuous drain current TC = 25°C [A] | 9,3 |
| Min. gate threshold voltage [V] | 2 |
| Turn-off delay time [ns] | 27 |