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IGZ 100 N 65 H5
Infineon IGBT series IGW/IGZ/IKW/IKZ
- insulated-gate bipolar transistors (IGBTs)
- in a TO247 housing
- TRENCHSTOP™
IGZ 100 N 65 H5
Specifications
| manufacturer | Infineon Technologies |
| Manufacturer's name | IGZ100N65H5XKSA1 |
| Case | TO247-4 |
| Power dissipation [W] | 536 |
| Turn-on delay time [ns] | 30 |
| Max. collector-emitter breakdown voltage [V] | 650 |
| Min. gate threshold voltage [V] | 3,2 |
| Max. collector current, pulsed [A] | 400 |
| Turn-off delay time [ns] | 421 |
| Max. continuous collector current at TC = 25°C | 161 |