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IGB 20 N 60 H3
Infineon SMD IGBT series IGB and IKB
- SMD insulated-gate bipolar transistors (SMD IGBTs)
- in a D²Pak housing (TO263-3)
- TRENCHSTOP™
- taped
IGB 20 N 60 H3
Specifications
| manufacturer | Infineon Technologies |
| Manufacturer's name | IGB20N60H3ATMA1 |
| Case | D²Pak |
| Power dissipation [W] | 170 |
| Turn-on delay time [ns] | 16 |
| Max. collector-emitter breakdown voltage [V] | 600 |
| Min. gate threshold voltage [V] | 4,1 |
| Max. collector current, pulsed [A] | 80 |
| Turn-off delay time [ns] | 194 |
| Max. continuous collector current at TC = 25°C | 40 |