Manufacturers

FS 50 R 06 W1E3

Infineon IGBT module series BSM/FF/FS

  • IGBT diode modules
  • in a 34MM-1 / 62MM-1 / EASY2-1 / EASY1B-1 housing
  • insulated-gate bipolar transistors

FS 50 R 06 W1E3 FS50R06W1E3BOMA1

FS 50 R 06 W1E3

44865 FS 50 R 06 W1E3 FS50R06W1E3BOMA1 FS50R06W1E3BOMA1 Infineon IGBT module series BSM/FF/FS. IGBT diode modules in a 34MM-1 / 62MM-1 / EASY2-1 / EASY1B-1 housing insulated-gate bipolar transistors

Specifications

manufacturer
Manufacturer's name FS50R06W1E3BOMA1
Case EASY1B-1
Peak forward surge current [A] -
(Max.) peak recurrent reverse voltage [V] -
(Max.) average forward (rectified) current [A] -
Power dissipation [mW] 205
Turn-on delay time [ns] 23
Max. collector-emitter breakdown voltage [V] 600
Min. gate threshold voltage [V] 4,9
Max. collector current, pulsed [A] 100
Turn-off delay time [ns] 220
Max. continuous collector current at TC = 25°C 70
Data Sheet

Unit price

36,59 €

Stock: 0

Minimum order quantity 24 units or
multiples of 24.