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Infineon IGBT module series BSM/FF/FS
- IGBT diode modules
- in a 34MM-1 / 62MM-1 / EASY2-1 / EASY1B-1 housing
- insulated-gate bipolar transistors
FS 35 R 12 W1T4
Specifications
| manufacturer | Infineon Technologies |
| Manufacturer's name | FS35R12W1T4BOMA1 |
| Case | EASY1B-1 |
| Peak forward surge current [A] | - |
| (Max.) peak recurrent reverse voltage [V] | - |
| (Max.) average forward (rectified) current [A] | - |
| Power dissipation [mW] | 225 |
| Turn-on delay time [ns] | 25 |
| Max. collector-emitter breakdown voltage [V] | 1200 |
| Min. gate threshold voltage [V] | 5 |
| Max. collector current, pulsed [A] | 70 |
| Turn-off delay time [ns] | 300 |
| Max. continuous collector current at TC = 25°C | 65 |