> Semiconductors>Transistors>IGBTs>Infineon IGBT diode modules, 34MM/62MM/EASY housing, BSM/FF/FS series>FF 100 R 12 RT4

Manufacturers

FF 100 R 12 RT4

Infineon IGBT module series BSM/FF/FS

  • IGBT diode modules
  • in a 34MM-1 / 62MM-1 / EASY2-1 / EASY1B-1 housing
  • insulated-gate bipolar transistors

FF 100 R 12 RT4 FF100R12RT4HOSA1

FF 100 R 12 RT4

44859 FF 100 R 12 RT4 FF100R12RT4HOSA1 FF100R12RT4HOSA1 Infineon IGBT module series BSM/FF/FS. IGBT diode modules in a 34MM-1 / 62MM-1 / EASY2-1 / EASY1B-1 housing insulated-gate bipolar transistors

Discontinued items. Only remainder of stock available.

Specifications

manufacturer
Manufacturer's name FF100R12RT4HOSA1
Case 34MM-1
Peak forward surge current [A] -
(Max.) peak recurrent reverse voltage [V] -
(Max.) average forward (rectified) current [A] -
Power dissipation [mW] 555
Turn-on delay time [ns] 150
Max. collector-emitter breakdown voltage [V] 1200
Min. gate threshold voltage [V] 5,2
Max. collector current, pulsed [A] 200
Turn-off delay time [ns] 380
Max. continuous collector current at TC = 25°C -
Data Sheet

Unit price

50,79 €

Stock: 1