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FM 1808 B-SG
• nonvolatile memory replacement for SRAMs and parallel EEPROMs
• JEDEC SRAM & EEPROM pinout
• writes at standard supply voltage
• up to 500 times the write speed than typ. EEPROMs
• 1 trillion (1012) write/read cycles
• 38 year data retention (at +75°C)
• low power Operation: 15mA active current
• supply voltage 4,5...5,5V
• temperature range -40...+85°C
• by Cypress
F-RAMs, parallel, 5V
• ferroelectric nonvolatile RAM• nonvolatile memory replacement for SRAMs and parallel EEPROMs
• JEDEC SRAM & EEPROM pinout
• writes at standard supply voltage
• up to 500 times the write speed than typ. EEPROMs
• 1 trillion (1012) write/read cycles
• 38 year data retention (at +75°C)
• low power Operation: 15mA active current
• supply voltage 4,5...5,5V
• temperature range -40...+85°C
• by Cypress
FM 1808 B-SG
Specifications
| manufacturer | Infineon Technologies |
| Manufacturer's name | FM1808B-SG |
| Case | SOL28 |
| Speed | 70ns |
| Organisation | 32kx8 |