nonvolatile ferroelectric memory modules in a SO8 resp. TDFN8 housing (FN_-DG)
replacement for serial SPI-Flash or SPI-EEPROMs
suitable for up to 100 trillions (1014) read/write cycles
with up to 38 years data retention
hard- and software protection
supply voltage: 2 to 3,6V
operating temperature: -40 to +85°C
FM 25V01 A-G
200626FM 25V01 A-G FM25V01A-GFM25V01A-GCypress FRAM series FM25.
nonvolatile ferroelectric memory modules in a SO8 resp. TDFN8 housing (FN_-DG)
replacement for serial SPI-Flash or SPI-EEPROMs
suitable for up to 100 trillions (1014) read/write cycles
with up to 38 years data retention
hard- and software protection
supply voltage: 2 to 3,6V
operating temperature: -40 to +85°C