nonvolatile ferroelectric memory modules in a SO8 housing
replacement for SPI-EEPROMs or SPI-Flash
with up to 1014 read/write cycles and a high reliability (38 years data retention at +75°C)
write speed is up to 500 times faster than conventional EEPROMs
hardware and software protection
supply voltage: 4,5 to 5,5V
operating temperature: -40 to +85°C
FM 25640 B-GTR
200624FM 25640 B-GTR FM25640B-GTRFM25640B-GTRCypress FRAM series FM25.
nonvolatile ferroelectric memory modules in a SO8 housing
replacement for SPI-EEPROMs or SPI-Flash
with up to 1014 read/write cycles and a high reliability (38 years data retention at +75°C)
write speed is up to 500 times faster than conventional EEPROMs
hardware and software protection
supply voltage: 4,5 to 5,5V
operating temperature: -40 to +85°C