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SI 4477 DY
Vishay SMD MOSFETs der Serie Si
- SMD-Leistungs-MOSFETs
- im SO8-Gehäuse
- Vishay Siliconix®
- gegurtet
SI 4477 DY
Technische Daten
| Hersteller | Vishay |
| Herstellerbezeichnung | SI4477DY-T1-GE3 |
| Gehäuse | SO8 |
| Ausführung | gegurtet |
| Max. Drain-Source-Spannung [V] | 20 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,0062 |
| Einschaltverzögerungszeit [ns] | 13 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 26,6 |
| Gate-Schwellenspannung, min. [V] | 0,6 |
| Ausschaltverzögerungszeit [ns] | 100 |