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IRFI 640 G
Vishay MOSFETs der Serie IRFI
- Leistungs-MOSFETs
- im TO220-Fullpak-Gehäuse
- Vishay Siliconix®
IRFI 640 G
Technische Daten
| Hersteller | Vishay |
| Herstellerbezeichnung | IRFI640GPBF |
| Gehäuse | TO220-Fullpak |
| Max. Drain-Source-Spannung [V] | 200 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,18 |
| Einschaltverzögerungszeit [ns] | 14 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 9,8 |
| Gate-Schwellenspannung, min. [V] | 2 |
| Ausschaltverzögerungszeit [ns] | 45 |