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TSM 110 NB 04 LCR
Taiwan Semiconductor SMD MOSFETs der Serien TSM und TQM
- SMD-Leistungs-MOSFETs
- im PDFN56-Gehäuse
- TSC
TSM 110 NB 04 LCR
Technische Daten
| Hersteller | Taiwan Semiconductor |
| Herstellerbezeichnung | TSM110NB04LCR RLG |
| Gehäuse | PDFN56 |
| Verlustleistung [W] | 68 |
| Max. Drain-Source-Spannung [V] | 60 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,012 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 54 |
| Einschaltverzögerungszeit [ns] | 6,5 |
| Gate-Schwellenspannung, min. [V] | 1,2 |
| Ausschaltverzögerungszeit [ns] | 26 |