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TSM 1 NB 60 CP
Taiwan Semiconductor MOSFETs der Serie TSM
- TSC SMD-Leistungs-MOSFETs
- im TO252-Gehäuse
- gegurtet
TSM 1 NB 60 CP
Technische Daten
| Hersteller | Taiwan Semiconductor |
| Herstellerbezeichnung | TSM1NB60CP ROG |
| Gehäuse | TO252 |
| Max. Drain-Source-Spannung [V] | 600 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 10 |
| Einschaltverzögerungszeit [ns] | 7,7 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 1 |
| Gate-Schwellenspannung, min. [V] | 2,5 |
| Ausschaltverzögerungszeit [ns] | 15,3 |