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TSM 2 N 60 SCW
Taiwan Semiconductor SMD MOSFETs der Serie TSM
- TSC SMD-Leistungs-MOSFETs
- im SOT223-Gehäuse
- N-Kanal
- gegurtet
TSM 2 N 60 SCW
Auslaufartikel, nur noch der Lagerbestand verfügbar.
Technische Daten
| Hersteller | Taiwan Semiconductor |
| Herstellerbezeichnung | TSM2N60SCW RPG |
| Gehäuse | SOT223 |
| Ausführung | gegurtet |
| Max. Drain-Source-Spannung [V] | 600 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 5 |
| Einschaltverzögerungszeit [ns] | 12 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 0,6 |
| Gate-Schwellenspannung, min. [V] | 2 |
| Ausschaltverzögerungszeit [ns] | 30 |