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Taiwan Semiconductor MOSFETs der Serie TSM
- TSC Leistungs-MOSFETs
- im TO251-Gehäuse
- N-Kanal
TSM 900 N 10 CH
Technische Daten
| Hersteller | Taiwan Semiconductor |
| Herstellerbezeichnung | TSM900N10CH X0G |
| Gehäuse | TO251S |
| Max. Dauer-Drainstrom | 15 |
| Max. Drain-Source-Spannung [V] | 100 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,09 |
| Einschaltverzögerungszeit [ns] | 2,4 |
| Gate-Schwellenspannung, min. [V] | 1,2 |
| Ausschaltverzögerungszeit [ns] | 18,9 |