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TSM 480 P 06 CP
Taiwan Semiconductor MOSFETs der Serie TSM
- TSC SMD-Leistungs-MOSFETs
- im TO252-Gehäuse
- gegurtet
TSM 480 P 06 CP
Technische Daten
| Hersteller | Taiwan Semiconductor |
| Herstellerbezeichnung | TSM480P06CP ROG |
| Gehäuse | TO252 |
| Ausführung | gegurtet |
| Max. Drain-Source-Spannung [V] | 60 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,048 |
| Einschaltverzögerungszeit [ns] | 13 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 20 |
| Gate-Schwellenspannung, min. [V] | 1,2 |
| Ausschaltverzögerungszeit [ns] | 64,6 |