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TSM 900 N 06 CW
Taiwan Semiconductor SMD MOSFETs der Serie TSM
- TSC SMD-Leistungs-MOSFETs
- im SOT223-Gehäuse
- N-Kanal
- gegurtet
TSM 900 N 06 CW
Technische Daten
| Hersteller | Taiwan Semiconductor |
| Herstellerbezeichnung | TSM900N06CW RPG |
| Gehäuse | SOT223 |
| Ausführung | gegurtet |
| Max. Drain-Source-Spannung [V] | 60 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,09 |
| Einschaltverzögerungszeit [ns] | 2,9 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 11 |
| Gate-Schwellenspannung, min. [V] | 1,2 |
| Ausschaltverzögerungszeit [ns] | 18,4 |