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TSG 10 N 120 CN
Taiwan Semiconductor IGBTs der Serien TSG
- Bipolartransistoren mit isolierter Gate-Elektrode (IGBTs)
- mit Fast Recovery Epitaxial Dioden (FRED)
- im TOP3- bzw. TO264-Gehäuse
TSG 10 N 120 CN
Auslaufartikel, nur noch der Lagerbestand verfügbar.
Technische Daten
| Hersteller | Taiwan Semiconductor |
| Herstellerbezeichnung | TSG10N120CN C0 |
| Gehäuse | TOP3 |
| Verlustleistung [W] | 125 |
| Einschaltverzögerungszeit [ns] | 30 |
| Kollektor-Emitter-Sperrspannung, max. [V] | 1200 |
| Gate-Schwellenspannung, min. [V] | 3 |
| Max. Kollektorstrom, gepulst [A] | 42 |
| Ausschaltverzögerungszeit [ns] | 130 |
| Max. Dauer-Kollektorstrom bei TC=25°C [A] | 21 |