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ES 3 G
Taiwan Semiconductor Gleichrichterdioden der Serie ES
- SMD Super Fast Gleichrichterdioden
- im DO214AB/SMC-Gehäuse
- glaspassiviert
- Durchlassstrom: 3A
ES 3 G
Technische Daten
| Hersteller | Taiwan Semiconductor |
| Herstellerbezeichnung | ES3G |
| Gehäuse | DO214AB/SMC |
| Stoßstrom-Grenzwert [A] | 100 |
| Max. Sperrverzugszeit [ns] | 35 |
| Max. Rückwärts-Spitzensperrspannung [V] | 400 |
| Max. Durchlassspannung [V] | 1,3 |
| Sperrstrom [µA] | 10 |
| Mittelwert Durchlassstrom [A] | 3 |