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BZT 52 B 6,8 V
* Gehäuse SOD323F
* nur 2% Toleranz UZ
* Anschlüsse lötbar nach MIL-STD-202, Meth. 208
* Lötbarkeit, max 260°C/10s
* Serie BZT52B_S by Taiwan Semiconductor
SMD-Z-Dioden 0,2 W
* gegurtet* Gehäuse SOD323F
* nur 2% Toleranz UZ
* Anschlüsse lötbar nach MIL-STD-202, Meth. 208
* Lötbarkeit, max 260°C/10s
* Serie BZT52B_S by Taiwan Semiconductor
BZT 52 B 6,8 V
Technische Daten
| Hersteller | Taiwan Semiconductor |
| Herstellerbezeichnung | BZT52B6V8S RRG |
| Gehäuse | SOD323F |
| Sperrstrom [µA] | 1,8 |
| Sperrspannung [V] | 4 |
| Zenerspannungsbereich [V] | 6,66 - 6,94 |
| Max. Zenerimpedanz [Ω] | 15 |
| Teststrom [mA] | 5 |
| Verlustleistung [mW] | 0,2 |