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1 M 200 Z
* gegurtet
* Gehäuse: DO41
* Kunststoff erfüllt UL94V-0
* Lötbarkeit, max 260°C/10s
Z-Dioden 1 Watt
* glaspassiviert* gegurtet
* Gehäuse: DO41
* Kunststoff erfüllt UL94V-0
* Lötbarkeit, max 260°C/10s
1 M 200 Z
Auslaufartikel, nur noch der Lagerbestand verfügbar.
Technische Daten
| Hersteller | Taiwan Semiconductor |
| Herstellerbezeichnung | 1M200Z |
| Gehäuse | DO41 |
| Sperrstrom [µA] | 5 |
| Sperrspannung [V] | 152 |
| Zenerspannungsbereich [V] | 190...210 |
| Max. Zenerimpedanz [Ω] | 1500 |
| Teststrom [mA] | 1,2 |
| Verlustleistung [W] | 1 |