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BAV 19 SOD123
Taiwan Semiconductor Silicium-Dioden der Serien 1N und BAV
- SMD-Silicium-Allzweck-Dioden
- im SOD123- bzw. SOT323-Gehäuse
- Lötbarkeit: max. 260°C/10s
BAV 19 SOD123
Technische Daten
| Hersteller | Taiwan Semiconductor |
| Herstellerbezeichnung | BAV19W RHG |
| Gehäuse | SOD123 |
| Sperrstrom [A] | 0,1 |
| Betriebstemperaturbereich [°C] | -65...+150 |
| Max. Rückwärts-Spitzensperrspannung [V] | 250 |
| Max. Durchlassspannung [V] | 1,25 |
| Mittelwert Durchlassstrom [A] | 0,2 |