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STP 18 N 65 M5
STMicroelectronics MOSFETs der Serie STP
- STM Leistungs-MOSFETs
- im TO220-Gehäuse
- MDmesh™ / SuperMESH™ / FDmesh™ / STripFET™ / DeepGATE™
STP 18 N 65 M5
Technische Daten
| Hersteller | STMicroelectronics |
| Herstellerbezeichnung | STP18N65M5 |
| Gehäuse | TO220 |
| Leistung [W] | 110 |
| Max. Drain-Source-Spannung [V] | 650 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,22 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 15 |