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STP 10 N 60 M2
STMicroelectronics MOSFETs der Serie STP
- STM Leistungs-MOSFETs
- im TO220-Gehäuse
- MDmesh™ / SuperMESH™ / FDmesh™ / STripFET™ / DeepGATE™
STP 10 N 60 M2
Technische Daten
| Hersteller | STMicroelectronics |
| Herstellerbezeichnung | STP10N60M2 |
| Gehäuse | TO220 |
| Leistung [W] | 85 |
| Max. Drain-Source-Spannung [V] | 600 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,6 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 7,5 |