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STGW 60 H 65 DRF
STMicroelectronics IGBTs der Serie STGW
- Bipolartransistor mit isolierter Gate-Elektrode (IGBTs)
- im TO247-Gehäuse
- PowerMESH™
STGW 60 H 65 DRF
Technische Daten
| Hersteller | STMicroelectronics |
| Herstellerbezeichnung | STGW60H65DRF |
| Gehäuse | TO247 |
| Verlustleistung [W] | 420 |
| Einschaltverzögerungszeit [ns] | 85 |
| Kollektor-Emitter-Sperrspannung, max. [V] | 650 |
| Max. Kollektorstrom, gepulst [A] | 240 |
| Ausschaltverzögerungszeit [ns] | 178 |
| Max. Dauer-Kollektorstrom bei TC=25°C [A] | 120 |