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STGW 25 M 120 DF3
STMicroelectronics IGBTs der Serie STGW
- Bipolartransistor mit isolierter Gate-Elektrode (IGBTs)
- im TO247-Gehäuse
- PowerMESH™
STGW 25 M 120 DF3
Technische Daten
| Hersteller | STMicroelectronics |
| Herstellerbezeichnung | STGW25M120DF3 |
| Gehäuse | TO247 |
| Verlustleistung [W] | 375 |
| Einschaltverzögerungszeit [ns] | 28 |
| Kollektor-Emitter-Sperrspannung, max. [V] | 1200 |
| Gate-Schwellenspannung, min. [V] | 5 |
| Max. Kollektorstrom, gepulst [A] | 100 |
| Ausschaltverzögerungszeit [ns] | 150 |
| Max. Dauer-Kollektorstrom bei TC=25°C [A] | 50 |