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STGW 15 M 120 DF3
Infineon IGBTs der Serien STGF und STGP
- Bipolartransistor mit isolierter Gate-Elektrode
- im TO220-Gehäuse
- PowerMESH™
STGW 15 M 120 DF3
Technische Daten
| Hersteller | STMicroelectronics |
| Herstellerbezeichnung | STGW15M120DF3 |
| Gehäuse | TO247 |
| Verlustleistung [W] | 259 |
| Einschaltverzögerungszeit [ns] | 26 |
| Gate-Schwellenspannung, min. [V] | 5 |
| Kollektor-Emitter-Sperrspannung, max. [V] | 1200 |
| Ausschaltverzögerungszeit [ns] | 122 |
| Max. Kollektorstrom, gepulst [A] | 60 |
| Max. Dauer-Kollektorstrom bei TC=25°C [A] | 30 |