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STGP 10 NB 60 SD
Infineon IGBTs der Serien STGF und STGP
- Bipolartransistor mit isolierter Gate-Elektrode
- im TO220-Gehäuse
- PowerMESH™
STGP 10 NB 60 SD
Technische Daten
| Hersteller | STMicroelectronics |
| Herstellerbezeichnung | STGP10NB60SD |
| Gehäuse | TO220 |
| Verlustleistung [W] | 80 |
| Einschaltverzögerungszeit [ns] | 700 |
| Kollektor-Emitter-Sperrspannung, max. [V] | 600 |
| Gate-Schwellenspannung, min. [V] | 2,5 |
| Max. Kollektorstrom, gepulst [A] | 80 |
| Ausschaltverzögerungszeit [ns] | 1200 |
| Max. Dauer-Kollektorstrom bei TC=25°C [A] | 29 |