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STGF 10 NC 60 KD
Infineon IGBTs der Serien STGF und STGP
- Bipolartransistor mit isolierter Gate-Elektrode
- im TO220-Gehäuse
- PowerMESH™
STGF 10 NC 60 KD
Technische Daten
| Hersteller | STMicroelectronics |
| Herstellerbezeichnung | STGF10NC60KD |
| Gehäuse | TO220 |
| Verlustleistung [W] | 25 |
| Einschaltverzögerungszeit [ns] | 17 |
| Kollektor-Emitter-Sperrspannung, max. [V] | 600 |
| Gate-Schwellenspannung, min. [V] | 4,5 |
| Max. Kollektorstrom, gepulst [A] | 30 |
| Ausschaltverzögerungszeit [ns] | 21 |
| Max. Dauer-Kollektorstrom bei TC=25°C [A] | 9 |