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STGD 3 NB 60 SDT4
STMicroelectronics SMD IGBTs der Serie STGD
- Bipolartransistoren mit isolierter Gate-Elektrode (IGBTs)
- in SMD-Bauweise
- im TO252-Gehäuse
- gegurtet
STGD 3 NB 60 SDT4
Technische Daten
| Hersteller | STMicroelectronics |
| Herstellerbezeichnung | STGD3NB60SDT4 |
| Gehäuse | TO252 |
| Ausführung | gegurtet |
| Verlustleistung [W] | 48 |
| Einschaltverzögerungszeit [ns] | 125000 |
| Gate-Schwellenspannung, min. [V] | 2,5 |
| Kollektor-Emitter-Sperrspannung, max. [V] | 600 |
| Ausschaltverzögerungszeit [ns] | 3400 |
| Max. Kollektorstrom, gepulst [A] | 25 |
| Max. Dauer-Kollektorstrom bei TC=25°C [A] | 6 |