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STD 100 N 10 F7
STMicroelectronics MOSFETs der Serie STD
- SMD-Leistungs-MOSFETs
- im TO252-Gehäuse
- SuperMESH™ / MDmesh™ / STripFET™
- gegurtet
STD 100 N 10 F7
Technische Daten
| Hersteller | STMicroelectronics |
| Herstellerbezeichnung | STD100N10F7 |
| Gehäuse | TO252 |
| Ausführung | gegurtet |
| Max. Drain-Source-Spannung [V] | 100 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,008 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 80 |
| Einschaltverzögerungszeit [ns] | 27 |
| Gate-Schwellenspannung, min. [V] | 2,5 |
| Ausschaltverzögerungszeit [ns] | 46 |