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STB 120 NF 10
SMD-Leistungs-MOSFETs
STB 120 NF 10
Technische Daten
| Hersteller | STMicroelectronics |
| Herstellerbezeichnung | STB120NF10T4 |
| Gehäuse | D²Pak |
| Ausführung | gegurtet |
| Max. Drain-Source-Spannung [V] | 100 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,0105 |
| Einschaltverzögerungszeit [ns] | 25 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 110 |
| Gate-Schwellenspannung, min. [V] | 2 |
| Ausschaltverzögerungszeit [ns] | 132 |