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STB 18 N 60 M2
STMicroelectronics SMD MOSFETs der Serie STB
- SMD-Leistungs-MOSFETs
- im D²Pak-Gehäuse
- MDmesh™ / SuperMESH™ / STripFET™ / DeepGATE™
- gegurtet
STB 18 N 60 M2
Technische Daten
| Hersteller | STMicroelectronics |
| Herstellerbezeichnung | STB18N60M2 |
| Gehäuse | D²Pak |
| Ausführung | gegurtet |
| Max. Drain-Source-Spannung [V] | 600 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,28 |
| Einschaltverzögerungszeit [ns] | 12 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 13 |
| Gate-Schwellenspannung, min. [V] | 2 |
| Ausschaltverzögerungszeit [ns] | 47 |