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Rohm SiC-Leistungs-MOSFET-Module der Serie BSM
- n-Kanal Typ
- Siliciumcarbid (SiC) als Halbleitermaterial
- geringe Schaltverluste
- Hochgeschwindigkeits-Schalten möglich
- verringerte Temperaturabhängigkeit
- Gehäuse:
- C-Pack (BSM080D12P2C008, BSM120C12P2C201, BSM120D12P2C005, BSM180C12P3C202, BSM180D12P2C101 und BSM180D12P3C007)
- E-Pack (BSM180D12P2E002, BSM300C12P3E201 und BSM300D12P2E001)
BSM180D12P3C007
Technische Daten
| Hersteller | Rohm |
| Herstellerbezeichnung | BSM180D12P3C007 |
| Gehäuse | C-Pack |