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FCH165N60E
ON Semiconductor MOSFETs der Serien FCH und FDH
- ONS Leistungs-MOSFETs
- im TO247-Gehäuse
- SupreMOS® / SuperFET® / FRFET® / PowerTrench®
FCH165N60E
Technische Daten
| Hersteller | ON Semiconductor (ONS) |
| Herstellerbezeichnung | FCH165N60E |
| Gehäuse | TO247 |
| Verlustleistung [W] | 227 |
| Max. Drain-Source-Spannung [V] | 600 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,165 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 23 |
| Einschaltverzögerungszeit [ns] | 22 |
| Gate-Schwellenspannung, min. [V] | 2,5 |
| Ausschaltverzögerungszeit [ns] | 100 |