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MJ 21196 G
ON Semiconductor Transistoren der Serien 2N und MJ
- Leistungstransistoren
- im TO3-Gehäuse
- PowerBase™
MJ 21196 G
Technische Daten
| Hersteller | ON Semiconductor (ONS) |
| Herstellerbezeichnung | MJ21196G |
| Gehäuse | TO3 |
| Kollektor-Emitter-Sperrspannung bei offener Basis [V] | 250 |
| Gleichstromverstärkung | <8 |
| Verlustleistung [W] | 250 |
| Kollektorstrom [mA] | 100 |