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MID 150-12 A4
Littelfuse IGBT-Module der Serien MDI und MID
- IGBT Dioden-Module
- im Y3-DCB- bzw. Y4-M5-Gehäuse
- Bipolartransistor mit isolierter Gate-Elektrode
MID 150-12 A4
Technische Daten
| Hersteller | Littelfuse |
| Herstellerbezeichnung | MID150-12A4 |
| Gehäuse | Y3-DCB |
| Stoßstrom-Grenzwert [A] | - |
| Max. Rückwärts-Spitzensperrspannung [V] | - |
| Mittelwert Durchlassstrom [A] | - |
| Verlustleistung [mW] | 760 |
| Einschaltverzögerungszeit [ns] | 100 |
| Kollektor-Emitter-Sperrspannung, max. [V] | 1200 |
| Gate-Schwellenspannung, min. [V] | 4,5 |
| Max. Kollektorstrom, gepulst [A] | 240 |
| Ausschaltverzögerungszeit [ns] | 500 |
| Max. Dauer-Kollektorstrom bei TC=25°C [A] | 180 |