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IXGH 32 N 170
Littelfuse IGBTs der Serien IXGH/IXXH/IXYH
- Bipolartransistor mit isolierter Gate-Elektrode
- im TO247AD-Gehäuse
- GenX3™ / GenX4™ / XPT™
IXGH 32 N 170
Technische Daten
| Hersteller | Littelfuse |
| Herstellerbezeichnung | IXGH32N170 |
| Gehäuse | TO247AD |
| Verlustleistung [W] | 350 |
| Einschaltverzögerungszeit [ns] | 45 |
| Kollektor-Emitter-Sperrspannung, max. [V] | 1700 |
| Gate-Schwellenspannung, min. [V] | 3 |
| Max. Kollektorstrom, gepulst [A] | 200 |
| Ausschaltverzögerungszeit [ns] | 270 |
| Max. Dauer-Kollektorstrom bei TC=25°C [A] | 75 |